NTE107 NTE ELECTRONICS, NTE107 Datasheet

Replacement Semiconductors TO-92 NPN UHF OSC

NTE107

Manufacturer Part Number
NTE107
Description
Replacement Semiconductors TO-92 NPN UHF OSC
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE107

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
2.1GHz
Power Dissipation Pd
200mW
Dc Collector Current
25mA
Dc Current Gain Hfe
75
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Lead temperature (During Soldering, 1/16” 1/32” from case, 10sec), T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width = 1 s, Duty Cycle = 1%.
Static Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector Saturation Voltage
Derate above +25 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
A
CBO
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF Oscillator for Tuner
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
A
V
V
J
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
I
I
h
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE107
I
I
I
V
V
V
I
C
CEO
E
C
CB
EB
CE
= 100 A
= 100 A
= 10mA, I
= 2V, I
= 15V, I
= 10V, I
= 3mA, Note 1
Test Conditions
C
E
C
B
= 0
= 0
= 1mA
= 8mA
L
. . . . . . . . . . . . . . .
Min Typ Max Unit
30
12
20
3
75
–55 to +125 C
2.67mW/ C
0.5
0.5
0.6
200mW
+100 C
+260 C
25mA
30V
12V
V
V
V
V
A
A
3V

Related parts for NTE107

NTE107 Summary of contents

Page 1

... Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners. Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance Noise Figure .100 (2.54) .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test Conditions 5mA ...

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