NTE382 NTE ELECTRONICS, NTE382 Datasheet
NTE382
Manufacturer Part Number
NTE382
Description
Replacement Semiconductors R245 NPN AU FREQ DRV
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE383.pdf
(2 pages)
Specifications of NTE382
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
140MHz
Power Dissipation Pd
900mW
Dc Collector Current
1A
Dc Current Gain Hfe
320
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Current Gain–Bandwidth Product
Capacitance
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE382 (NPN) & NTE383 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Frequency Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
V
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
C
h
CBO
f
FE
BE
T
ob
I
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
CE
CE
CE
CE
CB
= 10 A, I
= 10 A, I
= 1mA, R
= 500mA, I
= 100V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Conditions
C
C
C
C
C
E
BE
E
= 150mA
= 500mA
= 150mA
= 150mA
= 0
= 0
E
B
= 0, f = 1MHz
=
= 0
= 50mA
Min
120
100
160
30
5
–
–
–
–
–
Typ
–55 to +150 C
140
20
–
–
–
–
–
–
–
–
Max Unit
320
1.0
1.5
10
–
–
–
–
–
–
900mW
+150 C
120V
100V
MHz
pF
V
V
V
V
V
A
5V
1A
2A
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NTE382 Summary of contents
Page 1
... NTE382 (NPN) & NTE383 (PNP) Silicon Complementary Transistors Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V EBO Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .492 (12.5) Min .102 (2.6) Max .102 (2.6) Max .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .024 (0.62) Max .059 (1.5) Typ .197 (5.0) .102 (2.6) Max .102 (2.6) Max ...