NTE5620 NTE ELECTRONICS, NTE5620 Datasheet

Replacement Semiconductors TO-220 800V 8A TRIAC

NTE5620

Manufacturer Part Number
NTE5620
Description
Replacement Semiconductors TO-220 800V 8A TRIAC
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5620

Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max (qi), Igt
50mA
On State Rms Current It(rms)
8A
Peak Non Rep Surge Current Itsm 50hz
100A
Holding Current Max Ih
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim-
mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-
trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting
state for either polarity of applied voltage with positive or negative gate triggering.
Features:
D Blocking Voltage – 800 Volts
D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, V
On–State Current RMS, I
Peak Non–Repetitive Surge Current, I
Peak Gate Power (T
Average Gate Power (T
Peak Gate Current (Pulse Width = 2 s), I
RMS Isolation Voltage (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
Note 2. The case temperature reference point for all T
(T
(T
(One Full Cycle, 60Hz, T
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
lead of the package as close as possible to the plastic body.
J
C
= –40 to +125 C, 1/2 Sine Wave 50 to 60H
= +80 C, Full Cycle Sine Wave 50 to 60H
C
= +80 C, Pulse Width = 2 s), P
C
A
T(RMS)
= +80 C, t = 8.3ms), P
= +25 C, Relative Humidity
800V
stg
C
= +125 C, Preceded and followed by rated current)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
RM
TSM
, 8A, TO220 Full Pack
GM
J
thJC
NTE5620
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIAC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Z
, Note 2 )
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Z
C
, Gate Open, Note 1)
20%), V
measurements is a point on the center
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
(ISO)
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
–40 to +125 C
–40 to +150 C
. . . . . .
2.2 C/W
2.2 C/W
60 C/W
350mW
1500V
800V
100A
16W
8A
4A

Related parts for NTE5620

NTE5620 Summary of contents

Page 1

... The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim- mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con- trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering ...

Page 2

Electrical Characteristics: (T Characteristics Peak Blocking Current (Either Direction) (Rated +125 C, Gate Open) DRM J Peak On–State Voltage (Either Direction 11.3A Peak; Pulse Width = 1 to 2ms, TM Duty Cycle < 2%) ...

Page 3

MT 2 .408 (10.36) Max .280 (7.11) .490 (12.45 .100 (2.54 Gate .185 (4.7) .110 (2.79) .347 (8.8) .690 (17.53) Gate .500 (12.7) Min .105 (2.66) ...

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