NTE271 NTE ELECTRONICS, NTE271 Datasheet

Replacement Semiconductors TO-218 PNP DAR PWR

NTE271

Manufacturer Part Number
NTE271
Description
Replacement Semiconductors TO-218 PNP DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE271

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-100V
Power Dissipation Pd
125W
Dc Collector Current
-10A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Width = 5ms, Duty Cycle
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE270 (NPN) & NTE271 (PNP)
Darlington Power Amp, Switch
B
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= 1000 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
CEO(sus)
I
I
I
CEO
CBO
EBO
D
J
thJC
10%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
C
I
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
CB
BE
= 5A, V
= 30mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V
= 50V, I
= 100V, I
= 100V Min @ 30mA
Test Conditions
CE
2%.
B
B
E
= 4V
= 0
= 0, Note 2
= 0
Min
100
Typ
–65 to +150 C
–65 to +150 C
Max Unit
2.0
1.0
2.0
35.7 C/W
1.0 C/W
500mA
125W
100V
100V
mA
mA
mA
V
10A
15A
5V

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NTE271 Summary of contents

Page 1

... NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain Collector– ...

Page 2

... B = 40mA – – B – 0.15 = 5A, C 2%, – 0.55 & R Varied – 2.5 – 2.5 2%. NTE271 B .015 (0.39) NOTE: Dotted line indicates that case may have square corners Max Unit – – 2.0 V 3.0 V 3.5 V – s – s – s – ...

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