NTE5438 NTE ELECTRONICS, NTE5438 Datasheet

Replacement Semiconductors G/P SCR

NTE5438

Manufacturer Part Number
NTE5438
Description
Replacement Semiconductors G/P SCR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5438

Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
0.2mA
Current It Av
5.1A
On State Rms Current It(rms)
8A
Peak Non Rep Surge Current Itsm 50hz
80A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
for general purpose high voltage applications where gate sensitivity is required.
Absolute Maximum Ratings: (T
Repetitive Peak Off−State Voltage (T
On−State Current (All Conducting Angles, T
Average On−State Current (Half Cycle, = 180°, T
Non−Repetitive On−State Current, I
Fusing Current (t= 10ms, Half Cycle), I
Peak Reverse Gate Voltage (I
Peak Gate Current (10μs Max), I
Peak Gate Dissipation (10μs Max), P
Gate Dissipation (20ms Max), P
Oprating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Electrical Characteristics: (T
Off−State Leakage Current
NTE5437
NTE5438
Half Cycle, 60Hz
Half Cycle, 50Hz
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
8 Amp Senstitive Gate, TO220
I
DRM
Symbol
GR
stg
A
, I
G(AV)
GM
= +25°C unless otherwise specified)
RRM
= 50μA), V
A
NTE5437 & NTE5438
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
TSM
J
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
R
= −40° to +125°C, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
DRM
GK
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1kΩ
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+ V
C
GRM
thJA
= +85°C), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= Rated Voltage,
Test Conditions
C
= +85°C), I
T(RMS)
GK
= 1kΩ), V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
T(AV)
T
T
J
J
. . . . . . . . . . . . . . . . . . . .
= +125°C
= +25°C
L
DRM
. . . . . . . . . . . . . . .
, V
RRM
Min
−40° to +125°C
−40° to +125°C
Max
0.5
5.0
+250°C
60K/W
32A
4K/W
Unit
400V
600V
0.5W
mA
5.1A
μA
88A
80A
5W
8A
8V
2A
2
s

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NTE5438 Summary of contents

Page 1

... Silicon Controlled Rectifier (SCR) Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (T Repetitive Peak Off−State Voltage (T NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter On−State Voltage On−State Threshold Voltage On−State Slope Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn−Off Time ...

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