NTE2402 NTE ELECTRONICS, NTE2402 Datasheet

Replacement Semiconductors SOT-23 NPN UHF/VHF

NTE2402

Manufacturer Part Number
NTE2402
Description
Replacement Semiconductors SOT-23 NPN UHF/VHF
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2402

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency Typ Ft
5GHz
Power Dissipation Pd
200mW
Dc Collector Current
250mA
Dc Current Gain Hfe
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir-
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-
quency, these devices also have excellent wideband properties and low noise up to high frequencies.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
Collector Cutoff Current
DC Current Gain
Transition Frequency
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Parameter
C
Silicon Complementary Transistors
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2402 (NPN) & NTE2403 (PNP)
A
CBO
Low Noise, UHF/VHF Amplifier
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+60 C, Note 1), P
stg
J
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
I
h
CBO
C
C
C
f
FE
T
re
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
c
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
T
A
CB
CE
CE
CB
EB
CE
= +25 C
= 0.5V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
tot
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
C
C
E
C
C
= 0
= 14mA
= 14mA, f = 500MHz
= Ie = 0, f = 1MHz
= 2mA, f = 1MHz,
= I
thJA
c
= 0, f = 1MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
25
0.75
Typ
0.8
0.4
50
5
–65 to +150 C
Max Unit
50
430K/W
200mW
+150 C
25mA
GHz
nA
pF
pF
pF
20V
15V
2V

Related parts for NTE2402

NTE2402 Summary of contents

Page 1

... Silicon Complementary Transistors Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir- cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran- sistors feature low intermodulation distortion and high power gain ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Noise Figure (At Optimum Source Impedance) Max. Unilateral Power Gain (s Assumed to be Zero) re Output Voltage ( –60dB Note log | ...

Related keywords