NTE197 NTE ELECTRONICS, NTE197 Datasheet
NTE197
Manufacturer Part Number
NTE197
Description
Replacement Semiconductors TO-220 PNP AU PWROUT
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE196.pdf
(2 pages)
Specifications of NTE197
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-70V
Transition Frequency Typ Ft
10MHz
Power Dissipation Pd
1.67W
Dc Collector Current
100mA
Dc Current Gain Hfe
90
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: h
D Collector–Emitter Sustaining Voltage: V
D High Current–Gain Bandwidth Product:
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak
Derate Above 25 C
f
T
Parameter
= 4MHz Min @ I
= 10MHz Min @ I
Audio Power Output and Medium Power Switching
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE196 (NPN) & NTE197 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
C
C
= 500mA (NTE196)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
= 500mA (NTE197)
CEO(sus)
I
I
I
CEO
CEX
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
D
I
V
V
V
V
J
C
thJC
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
BE
CEO(sus)
= 100mA, I
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, V
= 60V, I
= 80V, V
= 5V, I
= 2.3 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 70V Min
B
EB(off)
= 0
EB(off)
B
= 0
= 0, Note 1
2%.
= 1.5V, T
= 1.5V
C
= 7A
C
= +150 C
Min Typ Max Unit
70
–
–
–
–
–65 to +150 C
–65 to +150 C
–
–
–
–
–
3.125 C/W
100
1.0
2.0
1.0
0.32W/ C
–
40W
mA
mA
mA
70V
80V
10A
V
A
5V
7A
3A
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NTE197 Summary of contents
Page 1
... Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for use in general purpose amplifier and switching applications. Features Current Gain Specified to 7 Amps Collector– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current–Gain Bandwidth Product NTE196 NTE197 Output Capacitance Small–Signal Current Gain Note 1. Pulse Test: Pulse Width | f Note test .147 (3.75) Dia Max ...