PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
PSMN1R8-30PL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
50
6 V
100
24 V
100
V
(A)
I
80
60
40
20
150
S
DS
0
= 15 V
0
All information provided in this document is subject to legal disclaimers.
Q
003aad398
G
(nC)
Rev. 02 — 2 November 2010
0.2
200
T
j
0.4
= 175 °C
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Fig 16. Input, output and reverse transfer capacitances
0.6
(pF)
10
10
10
10
C
5
4
3
2
10
as a function of drain-source voltage; typical
values
T
0.8
-1
j
003aad397
= 25 °C
V
SD
(V)
1
1
PSMN1R8-30PL
10
© NXP B.V. 2010. All rights reserved.
V
003aad399
DS
(V)
C
C
C
oss
rss
iss
10
2
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