PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN1R8-30PL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 November 2010
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
V
see
V
T
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
Figure
Figure 11
Figure 11
Figure 12
Figure 13
Figure 13
Figure 13
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; see
= 12 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 4.5 V; I
= 10 V; I
DS
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
10; see
13; see
14; see
14; see
DS
DS
DS
DS
DS
D
D
D
D
D
= 0 V; V
GS
GS
GS
DS
GS
GS
DS
= 15 V; V
= 15 V; V
= 25 A; T
= 25 A; T
= 25 A; T
= V
= V
= V
= 25 A; T
= 25 A; T
Figure 16
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 12
Figure 15
Figure 15
; T
; T
; T
GS
14;
j
j
j
j
j
j
GS
GS
j
j
j
j
j
= 10 V
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 25 °C;
= 175 °C;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 4.5 V;
PSMN1R8-30PL
[1]
Min
30
27
1.3
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.3
-
10
10
1.8
-
-
-
1.6
1
170
158
83
29
17
12
22
2.6
10180 -
2000
872
© NXP B.V. 2010. All rights reserved.
Max
-
-
2.15
-
2.45
4
200
100
100
2.3
3.42
2.4
4.73
1.8
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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