FDPF3N50NZ Fairchild Semiconductor, FDPF3N50NZ Datasheet

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FDPF3N50NZ

Manufacturer Part Number
FDPF3N50NZ
Description
MOSFET N-CH 500V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF3N50NZ

Input Capacitance (ciss) @ Vds
280pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Power - Max
27W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP3N50NZ / FDPF3N50NZ Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FDP3N50NZ / FDPF3N50NZ
N-Channel MOSFET
500V, 3A, 2.5
Features
• R
• Low Gate Charge (Typ. 6.2nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 2.1 (Typ.)@ V
(Typ. 2.5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
GS
= 10V, I
TO-220
FDP Series
D
= 1.5A
T
C
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
= 25
C
= 25
o
C unless otherwise noted*
o
G
C)
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect transis
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini
mize on-state resistance, provide superior switching perfor
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switching mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(potted)
(Note 1)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
FDP3N50NZ
FDP3N50NZ
0.43
62.5
1.8
12
54
2.3
3
-
-55 to +150
G
G
500
±25
113
300
5.4
10
3
FDPF3N50NZ
FDPF3N50NZ
UniFET-II
0.21
1.8*
12*
27
62.5
3*
4.6
March 2010
-
www.fairchildsemi.com
D
D
S
S
Units
W/
V/ns
Units
o
mJ
mJ
o
o
W
V
V
A
C/W
A
A
C
C
o
C
tm
TM

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FDPF3N50NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP3N50NZ / FDPF3N50NZ Rev. A Description = 1.5A These N-Channel enhancement mode power field effect transis D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini ...

Page 2

... Starting 3A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP3N50NZ / FDPF3N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 400 C iss = oss = rss = C gd 300 200 100 *Note 1MHz 0 0 Drain-Source Voltage [V] DS FDP3N50NZ / FDPF3N50NZ Rev. A Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 10V 20V GS o ...

Page 4

... J Figure 9. Maximum Safe Operating Area vs. Case Temperature-FDPF3N50NZ Operation in This Area is Limited by R DS(on) 0.1 *Notes: 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve- FDPF3N50NZ 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP3N50NZ / FDPF3N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.6 2 ...

Page 5

... FDP3N50NZ / FDPF3N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP3N50NZ / FDPF3N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Package Dimensions FDP3N50NZ / FDPF3N50NZ Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP3N50NZ / FDPF3N50NZ Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP3N50NZ / FDPF3N50NZ Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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