FDPF7N60NZ Fairchild Semiconductor, FDPF7N60NZ Datasheet

MOSFET N-CH 600V 6.5A TO-220F

FDPF7N60NZ

Manufacturer Part Number
FDPF7N60NZ
Description
MOSFET N-CH 600V 6.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF7N60NZ

Input Capacitance (ciss) @ Vds
730pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.25 Ohm @ 3.25A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Power - Max
33W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
PNP, N-Channel
Mounting Style
Through Hole
Power Dissipation
33 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF7N60NZ
Manufacturer:
FAIRCHILD
Quantity:
282
Part Number:
FDPF7N60NZ
Manufacturer:
Fairchi/ON
Quantity:
17 388
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP7N60NZ / FDPF7N60NZ
N-Channel MOSFET
600V, 6.5A, 1.25
Features
• R
• Low gate charge ( Typ. 13nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
Symbol
, T
Symbol
STG
DS(on)
rss
G D S
= 1.05 ( Typ.)@ V
( Typ. 7pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 3.25A
T
C
Parameter
Parameter
= 25
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C unless otherwise noted*
G
o
D
C)
S
C
C
= 25
= 100
o
C
1
o
C)
TO-220F
FDPF Series
(potted)
o
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
Description
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N60NZ
FDP7N60NZ
0.85
62.5
147
0.5
6.5
3.9
1.2
26
-55 to +150
UniFET-II
14.7
600
±30
275
300
6.5
10
September 2010
FDPF7N60NZ
FDPF7N60NZ
62.5
0.26
6.5*
3.9*
3.8
26*
33
-
www.fairchildsemi.com
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
TM
C

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FDPF7N60NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. A Description = 3.25A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting 6.5A, di/dt 200A/s, V  Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP7N60NZ / FDPF7N60NZ Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 1000 100 ( C iss = shorted C oss = rss = Note 1MHz 1 0 Drain-Source Voltage [V] DS FDP7N60NZ / FDPF7N60NZ Rev. A Figure 2. Transfer Characteristics  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V Note : Figure 6. Gate Charge Characteristics C iss ...

Page 4

... Limited by R DS(on) * Notes : 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs Case Temperature Case Temperature C FDP7N60NZ / FDPF7N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : 250uA D 50 100 150 o C] Figure 10. Maximum Drain Current 100   100 s 1ms 10ms ...

Page 5

... Single pulse 0.001 -5 10 FDP7N60NZ / FDPF7N60NZ Rev. A Figure 12. Transient Thermal Response Curve -FDPF7N60NZ Single pulse - Rectangular Pulse Duration [sec] Figure 13. Transient Thermal Response Curve -FDP7N60NZ - Rectangular Pulse Duration [sec] ...

Page 6

... FDP7N60NZ / FDPF7N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP7N60NZ / FDPF7N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions FDP7N60NZ / FDPF7N60NZ Rev. A TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP7N60NZ / FDPF7N60NZ Rev. A (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP7N60NZ / FDPF7N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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