FDPF7N60NZ Fairchild Semiconductor, FDPF7N60NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF7N60NZ
• Description: MOSFET N-CH 600V 6.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF7N60NZ

• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: PNP, N-Channel
• Mounting Style: Through Hole
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP7N60NZ / FDPF7N60NZ Rev. A
Typical Performance Characteristics
Figure 11. Maximum Drain Current vs Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
8
6
4
2
0
1
25
1
Operation in This Area
is Limited by R
vs. Temperature
-50
-FDPF7N60NZ
50
T
T
V
C
J
, Junction Temperature [
DS
, Case Temperature
, Drain-Source Voltage [V]
10
DS(on)
* Notes :
75
0
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
100
50
o
DC
o
C
C
100
10ms
[
o
* Notes :
1ms
C
1. V
2. I
]
100
o
125
100
C]
D
GS

= 250uA
s
10
= 0V

s
1000
150
150
(Continued)
4
Figure 8. On-Resistance Variation
0.01
Figure 10. Maximum Drain Current
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
10
0
1
-100
1
Operation in This Area
is Limited by R
-50
T
vs Temperature
V
J
-FDP7N60NZ
, Junction Temperature [
DS
, Drain-Source Voltage [V]
10
DS(on)
* Notes :
0
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
o
DC
o
C
C
100
10ms
* Notes :
1. V
2. I
1ms
o
100
C]
100
D
GS
= 3.25A

= 10V
s
30
www.fairchildsemi.com

s
150
1000