FDPF10N60NZ Fairchild Semiconductor, FDPF10N60NZ Datasheet

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FDPF10N60NZ

Manufacturer Part Number
FDPF10N60NZ
Description
MOSFET N-CH 600V 10A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF10N60NZ

Input Capacitance (ciss) @ Vds
1475pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. A
MOSFET Maximum Ratings
*Dran current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP10N60NZ / FDPF10N60NZ
N-Channel MOSFET
600V, 10A, 0.75
Features
• R
• Low Gate Charge ( Typ. 23nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.64 ( Typ.)@ V
( Typ. 10pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FDP Series
= 10V, I
D
= 5A
T
C
Parameter
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
= 25
C
= 25
o
C unless otherwise noted
o
G
C)
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(potted)
*
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP10N60NZ
FDP10N60NZ
0.68
62.5
185
1.5
0.5
10
40
6
-55 to +150
G
G
18.5
600
±25
550
300
10
10
UniFET-II
FDPF10N60NZ
FDPF10N60NZ
September 2010
62.5
10*
40*
0.3
3.3
38
6*
-
www.fairchildsemi.com
D
D
S
S
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF10N60NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP10N60NZ / FDPF10N60NZ Rev. A Description = 5A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... G 10A, di/dt  200A/s, V  Starting DSS 4.Pulse test: Pulse width s,Duty Cycle  5. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60NZ / FDPF10N60NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 4000 1000 100 iss = shorted C oss = rss = Drain-Source Voltage [V] DS FDP10N60NZ / FDPF10N60NZ Rev. A Figure 2. Transfer Characteristics 100 *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 10V V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

Page 4

... Operation in This Area is Limited by R DS(on) *Notes: 0.1 0.01 0 Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP10N60NZ / FDPF10N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.75 *Notes  250 A D 0.25 50 100 150 Figure 10. Maximum Safe Operating Area   ...

Page 5

... Typical Performance Characteristics 2 1 0.1 0.01 0.005 5 1 0.1 0.01 0.001 10 FDP10N60NZ / FDPF10N60NZ Rev. A (Continued) Figure 12. Transient Thermal -FDP10N60NZ 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse - Rectangular Pulse Duration [sec] Figure 13. Transient Thermal -FDPF10N60NZ 0.5 0.2 0.1 0.05 0.02 0.01 ...

Page 6

... FDP10N60NZ / FDPF10N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP10N60NZ / FDPF10N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions FDP10N60NZ / FDPF10N60NZ Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP10N60NZ / FDPF10N60NZ Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N60NZ / FDPF10N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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