AUIRLR3410 International Rectifier, AUIRLR3410 Datasheet - Page 6

• Manufacturer Part Number: AUIRLR3410
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3410

• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 155 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 17 A
• Power Dissipation: 79 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AUIRLR3410
6
0.01
20
15
10
0.1
5
0
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Case Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
DM
x Z
1
0.1
thJC
P
2
DM
t
+ T
d(off)
C
t
www.irf.com
1
t
t
f
2
+
-
1