BSZ16DN25NS3G Infineon Technologies, BSZ16DN25NS3G Datasheet
BSZ16DN25NS3G
Specifications of BSZ16DN25NS3G
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BSZ16DN25NS3G Summary of contents
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Type TM 3 Power-Transistor Features R DS(on) R DS(on) Type Package BSZ16DN25NS3 G PG-TSDSON-8 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 4) Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter: t ...
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Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f |>2 ...
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Drain-source on-state resistance =10 V DS(on 450 400 350 300 250 98 % 200 150 100 50 0 -60 - Typ. capacitances ...
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Avalanche characteristics parameter: T j(start) 15 Drain-source breakdown voltage V =f BR(DSS 280 270 260 250 240 230 -60 - ...
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Package Outline:PG-TSDSON-8 Rev. 2.1 page 8 BSZ16DN25NS3 G 2010-09-01 ...
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Rev. 2.1 page 9 BSZ16DN25NS3 G 2010-09-01 ...