IS61WV6416BLL-12TLI INTEGRATED SILICON SOLUTION (ISSI), IS61WV6416BLL-12TLI Datasheet
IS61WV6416BLL-12TLI
Specifications of IS61WV6416BLL-12TLI
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IS61WV6416BLL-12TLI Summary of contents
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... IS64WV6416BLL IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation (typical) operating 25 µW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • ...
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... IS64WV6416BLL IS61WV6416BLL PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm I I GND I/O A14 I/O A15 I/O A12 NC A13 A10 A9 PIN DESCRIPTIONS A0-A15 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) ...
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... IS61WV6416BLL TRUTH TABLE Mode Not Selected X Output Disabled H X Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Storage Temperature STG P Power Dissipation Related to GND DD DD Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...
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... IS64WV6416BLL IS61WV6416BLL DC ELECTRICAL CHARACTERISTICS V = 2.5V-3.6V DD Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage IL I Input Leakage LI I Output Leakage LO Note (min.) = –0.3V DC; V (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested (max 0.3V DC ...
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... IS61WV6416BLL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I OUT I Operating Supply Current Iout = 0mA CMOS Standby ≥ V Current (CMOS Inputs) ≥ ≤ 0.2V Note address and data inputs are cycling at the maximum frequency means no input lines change. ...
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... IS64WV6416BLL IS61WV6416BLL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load AC TEST LOADS Zo=50Ω OUTPUT Figure 1a. 6 Unit (2.5V-3.6V) (3. 1.5ns See Figures 1a and 1b See Figures 1a and 1b 50Ω ...
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... IS61WV6416BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE CE to Low-Z Output ...
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... IS64WV6416BLL IS61WV6416BLL AC WAVEFORMS (Address Controlled) ( (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE LB LZB HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB Address is valid prior to or coincident with CE LOW transition. ...
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... WE HIGH to Low-Z Output t (3) LZWE Notes: 1. Test conditions for IS61WV6416BLL assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input pulse levels and output loading specified in Figure 1a Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. ...
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... IS64WV6416BLL IS61WV6416BLL (CE Controlled HIGH or LOW) WRITE CYCLE NO. 1 (1,2) ADDRESS UB DATA UNDEFINED OUT VALID ADDRESS t SCE PWE1 t PWE2 t PBW t HZWE HIGH DATA VALID IN Integrated Silicon Solution, Inc. — www.issi.com — ISSI ® LZWE t HD UB_CEWR1.eps 1-800-379-4774 Rev. C 10/10/06 ...
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... IS61WV6416BLL (1) (WE Controlled HIGH during Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE LOW CE LOW UB DATA UNDEFINED OUT D IN Integrated Silicon Solution, Inc. — www.issi.com — Rev. C 10/10/06 ...
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... IS64WV6416BLL IS61WV6416BLL (LB, UB Controlled, Back-to-Back Write) WRITE CYCLE NO. 4 ADDRESS OE CE LOW WE UB HZWE D OUT DATA UNDEFINED D IN Notes: 1. The internal Write time is defined by the overlap LOW, UB and/ LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The referenced to the rising or falling edge of the signal that terminates the Write ...
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... IS61WV6416BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical values are measured 2.5V DATA RETENTION WAVEFORM V DD 1.65V 1. GND Integrated Silicon Solution, Inc. — www.issi.com — ...
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... IS61WV6416BLL ORDERING INFORMATION Commercial Temperature Range: 0°C to +70°C Speed (ns) Order Part No. 12 IS61WV6416BLL-12KL Industrial Temperature Range: –40°C to +85°C Speed (ns) Order Part No. 12 IS61WV6416BLL-12TI 12 IS61WV6416BLL-12TLI 12 IS61WV6416BLL-12KLI 12 IS61WV6416BLL-12BI 12 IS61WV6416BLL-12BLI Temperature Range (A3): –40°C to +125°C Speed (ns) Order Part No (12 ) IS64WV6416BLL-15TA3 ...
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PACKAGING INFORMATION 400-mil Plastic SOJ Package Code Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 ...
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PACKAGING INFORMATION Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 ...
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PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (48-pin) Top View SEATING PLANE mBGA - 6mm x 8mm MILLIMETERS Sym. Min. Typ. Max. Min. Typ. ...
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PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads ( — 1.20 — A1 0.05 0.15 0.002 0.006 b 0.30 0.52 0.012 ...