DG2020DV-T1 Vishay, DG2020DV-T1 Datasheet - Page 2
![IC, ANALOG SWITCH, SINGLE, SPDT, TSOP-6](/photos/18/99/189973/4243386_sml.jpg)
DG2020DV-T1
Manufacturer Part Number
DG2020DV-T1
Description
IC, ANALOG SWITCH, SINGLE, SPDT, TSOP-6
Manufacturer
Vishay
Datasheet
1.DG2020DV-T1-E3.pdf
(7 pages)
Specifications of DG2020DV-T1
Analog Switch Type
SPDT
No. Of Channels
1
On State Resistance Max
0.8ohm
Turn Off Time
1µs
Turn On Time
3µs
Supply Voltage Range
2.7V To 5.5V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DG2020
Vishay Siliconix
Reference to GND
V+
IN, COM, NC, NO
Continuous Current (Any terminal)
Peak Current
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
www.vishay.com
2
Analog Switch
Analog Signal Range
On-Resistance
r
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Crosstalk
N
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
ON
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, N
Flatness
C
Off Capacitance
d
d
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
d
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
d
d
d
f
f
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
I
Flatness
INL
I
I
t
t
C
NO
r
r
r
I
t
t
C
C
C
COM(off)
COM(on)
OFF(NO)
OFF(NC)
I
ON(NO)
ON(NO)
ON(NC)
ON(NO)
NO(off)
ON(NC)
X
V
OIRR
NC(off)
V
Q
NO(off)
NC(off)
NO(on)
V
NC(on)
COM
TALK
V+
P
C
or I
, V
t
I+
INH
INL
INJ
d
in
C
NC
INH
,
,
-0.3 to (V+ + 0.3 V)
V+ = 2.7 V, V
V
V
NO
NO
V+ = 3.3 V, V
Otherwise Unless Specified
-65 to 125 C
V+ = 3 V, "10%, V
-0.3 to +6 V
V
C
or V
or V
"200 mA
COM
L
R
V+ = 3.3 V, V
V+ = 3.3 V, V
"50 mA
= 1 nF, V
L
NC
NC
= 50 W, C
New Product
V
Test Conditions
= 0 to V+, I
IN
= 2.0 V, R
= 2.0 V, R
COM
= 0 or V+, f = 1 MHz
V
W
NO
V
V
COM
GEN
V+ = 2.7 V
IN
IN
= 1.5 V, I
, V
L
NO
NO
= 0 or V+
= 0 or V+
= 3 V/1 V
= 5 pF, f = 1 MHz
NC
= 0 V, R
NO
L
L
, V
, V
IN
= 300 W, C
= 300 W, C
= V
, I
NC
NC
Power Dissipation (Packages)
TSOP-6
Notes:
a.
b.
c.
= 0.4 or 2.0 V
NC
NO
COM
= 1 V/3 V
= 1 V/3 V
GEN
, I
= 100 mA
W
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 7.0 mW/_C above 25_C
NC
= 1 V/3 V
c
= 0 W
= 100 mA
L
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 35 pF
= 35 pF
e
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
b
Min
–2.3
–2.3
–2.3
–60
–60
–60
2.7
0
2
1
1
b
–40 to 85_C
Limits
Typ
0.42
–52
–53
1.4
1.5
2.2
2.3
3.7
0.2
75
34
88
95
S-04456—Rev. A, 03-Aug-01
6
5
2
2
3
1
Document Number: 71676
c
Max
2.0
2.1
3.2
3.3
2.3
2.3
2.3
0.4
5.5
4.5
3.3
1.0
3.3
V+
60
60
60
10
11
1
7
8
5
4
b
570 mW
Unit
mW
nA
pF
mA
pC
dB
pF
mA
ms
V
W
V
V