DG211BDJ Vishay, DG211BDJ Datasheet

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DG211BDJ

Manufacturer Part Number
DG211BDJ
Description
IC, ANALOG SWITCH, QUAD, SPST, DIP-16
Manufacturer
Vishay
Type
Analog Switchr
Datasheets

Specifications of DG211BDJ

Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
1ohm
Turn Off Time
200ns
Turn On Time
300ns
Supply Voltage Range
4.5V To 25V
Operating Temperature Range
-40°C To +85°C
Package
16PDIP
Maximum On Resistance
160@12V Ohm
Maximum High Level Output Current
100 mA
Maximum Turn-off Time
200@±15V ns
Maximum Turn-on Time
300@±15V ns
Switch Architecture
SPST
Power Supply Type
Single|Dual
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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DESCRIPTION
The DG211B, DG212B analog switches are highly improved
versions of the industry-standard DG211, DG212. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B
can handle up to ± 22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (see Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
GND
IN
IN
V-
D
S
S
D
1
1
1
4
4
4
Dual-In-Line, SOIC and TSSOP
1
2
3
4
5
6
7
8
Improved Quad CMOS Analog Switches
DG211B
Top View
16
15
14
13
12
10
11
9
IN
D
S
V+
V
S
D
IN
2
2
L
3
3
2
3
FEATURES
BENEFITS
APPLICATIONS
Logic “0” 0.8 V
Logic “1” 2.4 V
• ± 22 V supply voltage rating
• TTL and CMOS compatible logic
• Low on-resistance - R
• Low leakage - I
• Single supply operation possible
• Extended temperature range
• Fast switching - t
• Simple logic interface
• Higher accuracy
• Minimum transients
• Reduced power consumption
• Superior to DG211, DG212
• Industrial instrumentation
• Test equipment
• Communications systems
• Disk drives
• Computer peripherals
• Portable instruments
• Sample-and-hold circuits
TRUTH TABLE
Low charge injection - Q: 1 pC
Wide analog signal range
Space savings (TSSOP)
Logic
0
1
D(on)
ON
: 120 ns
: 20 pA
DS(on)
DG211B
DG211B, DG212B
OFF
ON
: 50 
Vishay Siliconix
www.vishay.com
DG212B
OFF
ON
1

Related parts for DG211BDJ

DG211BDJ Summary of contents

Page 1

... DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc ...

Page 2

... DG211BDY DG211BDY-T1 DG212BDY DG212BDY-T1 DG211BDQ DG211BDQ-T1 16-Pin TSSOP DG212BDQ DG212BDQ- °C, unless otherwise noted Level Shift/ Drive Figure 1. Lead (Pb)-free Part Number DG211BDJ-E3 DG212BDJ-E3 DG211BDY-E3 DG211BDY-T1-E3 DG212BDY-E3 DG212BDY-T1-E3 DG211BDQ-E3 DG211BDQ-T1-E3 DG212BDQ-E3 DG212BDQ-T1-E3 Limit mA, whichever occurs first 30 100 - 65 to 125 ...

Page 3

... S(off MHz S D(off MHz D(on  pF 100 kHz S RMS TALK DG211B, DG212B Vishay Siliconix D Suffix - 40 ° ° Temp. Min. Typ. Max. Full - 15 Room 45 Full Room 2 Room - 0.5 ± 0.01 Full - 5 Room - 0.5 ± 0.01 Full - 5 Room - 0.5 ± 0.02 ...

Page 4

... DG211B, DG212B Vishay Siliconix SPECIFICATIONS (for Single Supply) Parameter Symbol Analog Switch d Analog Signal Range V ANALOG Drain-Source R DS(on) On-Resistance Dynamic Characteristics Turn-On Time t Turn-Off Time t Charge Injection Power Supply Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for ...

Page 5

... D 100 D( Temperature (°C) Leakage Current vs. Temperature Document Number: 70040 S11-0179-Rev. J, 07-Feb- °C, unless otherwise noted 105 125 120 11 0 100 10K 100K Frequency (Hz) Off Isolation vs. Frequency DG211B, DG212B Vishay Siliconix ° D(on Analog V oltage (V) ANALO G Leakage Currents vs. Analog Voltage Analog Voltage (V) ...

Page 6

... DG211B, DG212B Vishay Siliconix TEST CIRCUITS + GND - Ω 0V, 2.4 V GND V S Off Isolation = 20 log V O Figure 3. Off Isolation + GND - 15 V www.vishay.com 6 Logic Input kΩ Switch Output DS(on) Figure 2. Switching Time bypass X Isolation = 20 log TALK 1000 pF V- Figure 5. Charge Injection OFF Ω ...

Page 7

... Document Number: 70040 S11-0179-Rev. J, 07-Feb- DG21 Figure 6. Sample-and-Hold + 15 V 160 V 1 120 GND - MΩ (Voltage Gain Below Break Frequency OUT Max. Attenuation = DG211B, DG212B Vishay Siliconix Logic Input Low = Sample High = Hold 1 kΩ J202 2N4400 50 pF 200 W 1000 pF J507 J500 - ...

Page 8

... Figure 8. A Precision Amplifier with Digitally Programable Input and Gains Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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