SE5470-002 Honeywell Sensing and Control, SE5470-002 Datasheet

DIODE IR EMITTING ALGAAS TO46

SE5470-002

Manufacturer Part Number
SE5470-002
Description
DIODE IR EMITTING ALGAAS TO46
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SE5470-002

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
DESCRIPTION
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
SE3470/5470
AlGaAs Infrared Emitting Diode
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
32
SE3470
DIM_005a.ds4
SE5470
DIM_005b.ds4
INFRA-83.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
.219 (5.56)
.208 (5.28)
.219 (5.56)
.208 (5.28)
.160 (4.06)
.137 (3.48)
.160 (4.06)
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIA.
DIA.
DIA.
DIA.
3 plc decimals
2 plc decimals
.188 (4.77)
.178 (4.52)
.188 (4.77)
.178 (4.52)
DIA.
(12.70)
(12.70)
.153 (3.89)
.140 (3.56)
.500
MIN.
.500
MIN.
5.08
.200
.015
(0.36)
.015
(0.36)
DIA.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
.048(1.22)
.048(1.22)
.028(.71)
.028(.71)
±0.005(0.12)
±0.020(0.51)
(.460)
(.460)
.018
.018
45°
45°
.046(1.17)
.046(1.17)
.036(.91)
.036(.91)
DIA.
DIA.
LEADS:
1. CATHODE (TAB)
2. ANODE
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
1
2
1
2
.100(2.54)DIA
NOM
.100(2.54)DIA
NOM
(CASE)

Related parts for SE5470-002

SE5470-002 Summary of contents

Page 1

... The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current ...

Page 2

SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 ...

Page 3

... Temperature 1.70 1.65 1.60 1.55 1.50 1.45 I 1.40 1.35 1.30 -50 - Temperature - C 34 Fig. 2 Radiant Intensity vs Angular Displacement (SE5470) gra_017.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current gra_018.ds4 1.6 1 ...

Page 4

... Wavelength - nm Fig. 9 Coupling Characteristics SE5470 with SD5443 1.0 0.8 0.6 0.4 0.2 0 Lens-to-lens distance - inches All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible ...

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