PESD5Z12 NXP Semiconductors, PESD5Z12 Datasheet - Page 3

• Manufacturer Part Number: PESD5Z12
• Description: DIODE,TVS,UNI DIR,12V,200W,SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5Z12

• Reverse Stand-off Voltage Vrwm: 12V
• Breakdown Voltage Range: 14.1V
• Clamping Voltage Vc Max: 35V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 6A
• Diode Case Style: SOD-523
• No. Of: RoHS Compliant

NXP Semiconductors
4. Marking
5. Limiting values
PESD5ZX_SER_2
Product data sheet
Table 5.
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Type number
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
Symbol
Per diode
P
I
Per device
T
T
T
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Marking codes
Limiting values
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
Rev. 02 — 4 April 2008
Low capacitance unidirectional ESD protection diodes
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Marking code
N7
N8
N9
NA
NB
NC
PESD5Zx series
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2008. All rights reserved.
Max
260
260
180
180
180
200
20
20
10
10
10
6
150
+150
+150
Unit
W
W
W
W
W
W
A
A
A
A
A
A
C
C
C
3 of 17