PESD5Z12 NXP Semiconductors, PESD5Z12 Datasheet - Page 6

• Manufacturer Part Number: PESD5Z12
• Description: DIODE,TVS,UNI DIR,12V,200W,SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5Z12

• Reverse Stand-off Voltage Vrwm: 12V
• Breakdown Voltage Range: 14.1V
• Clamping Voltage Vc Max: 35V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 6A
• Diode Case Style: SOD-523
• No. Of: RoHS Compliant

NXP Semiconductors
PESD5ZX_SER_2
Product data sheet
Fig 3. Peak pulse power as a function of exponential
P
(1) PESD5Z2.5; PESD5Z3.3
(2) PESD5Z5.0; PESD5Z6.0; PESD5Z7.0; PESD5Z12
(W)
PP
10
10
10
10
1
4
3
2
T
pulse duration; typical values
1
amb
= 25 C
10
(1)
(2)
Table 9.
T
[1]
[2]
Symbol Parameter
V
r
amb
dif
CL
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
10
= 25 C unless otherwise specified.
2
clamping voltage
differential resistance
Characteristics
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
10
3
006aab056
t
p
( s)
10
Rev. 02 — 4 April 2008
4
…continued
Low capacitance unidirectional ESD protection diodes
Conditions
I
I
I
I
I
I
I
PP
PP
PP
PP
PP
PP
R
Fig 4. Relative variation of peak pulse power as a
= 5 mA
P
= 20 A
= 20 A
= 10 A
= 10 A
= 10 A
= 6 A
PP(25 C)
P
PP
1.2
0.8
0.4
0
function of junction temperature; typical values
0
50
[1][2]
PESD5Zx series
Min
-
-
-
-
-
-
-
-
-
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
150
© NXP B.V. 2008. All rights reserved.
001aaa193
T
j
Max
15
18
18
18
19
35
60
10
15
15
15
40
( C)
200
Unit
V
V
V
V
V
V
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