BYV410-600 NXP Semiconductors, BYV410-600 Datasheet
BYV410-600
Specifications of BYV410-600
Related parts for BYV410-600
BYV410-600 Summary of contents
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... BYV410-600 Enhanced ultrafast dual rectifier diode Rev. 01 — 29 June 2009 1. Product profile 1.1 General description Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Low on state losses 1.3 Applications Dual mode (DCM and CCM) PFC 1 ...
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... Figure 2 δ = 0.5; t ≤ 108 °C; per diode = 25 µ 8.3 ms; sine-wave pulse °C; per diode p j(init ms; sine-wave pulse °C; per diode p j(init) Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode Graphic symbol sym125 3 Version SOT78 Min Max - 600 - 600 - ...
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... Product data sheet 003aad262 24 P δ tot ( (A) F(AV) Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode 003aad263 a = 180° 120 F(AV) © NXP B.V. 2009. All rights reserved ...
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... Transient thermal impedance from junction to mounting base per diode as a function of pulse width BYV410-600_1 Product data sheet Conditions with heatsink compound; per diode; see Figure 3 with heatsink compound; both diodes conducting −4 −3 − Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode Min Typ Max - - 2 1 001aag912 t ...
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... A/µ °C; see Figure /dt = 100 A/µ see Figure /dt = 100 A/µs; see Figure 003aad261 (V) Fig 5. Reverse recovery definitions; ramp recovery F Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode Min Typ Max - 1.3 1.9 - 1 1.4 1 © ...
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... NXP Semiconductors Fig 6. Forward recovery definitions BYV410-600_1 Product data sheet Enhanced ultrafast dual rectifier diode time time 001aab912 Rev. 01 — 29 June 2009 BYV410-600 FRM © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BYV410-600_1 20090629 BYV410-600_1 Product data sheet Enhanced ultrafast dual rectifier diode Data sheet status Change notice Product data sheet - Rev. 01 — 29 June 2009 BYV410-600 Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 29 June 2009 BYV410-600 Enhanced ultrafast dual rectifier diode © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BYV410-600_1 All rights reserved. Date of release: 29 June 2009 ...