2MBI400U2B-060-50 FUJI ELECTRIC, 2MBI400U2B-060-50 Datasheet - Page 10
![no-image](/images/no-image-200.jpg)
2MBI400U2B-060-50
Manufacturer Part Number
2MBI400U2B-060-50
Description
DUAL IGBT MODULE 400A 600V NPT
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI400U2B-060-50.pdf
(14 pages)
Specifications of 2MBI400U2B-060-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
2.55V
Power Dissipation Max
1.25kW
Collector Emitter Voltage V(br)ceo
600V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI400U2B-060-50
Manufacturer:
FUJI
Quantity:
134
1000
1000
100.0
800
600
400
200
800
600
400
200
10.0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
10
VGE=15V / chip
VGE=20V15V 12V
Tj= 25℃ / chip
2
Coes
2
Tj=25℃
3
Cres
20
Cies
3
4
Tj=125℃
10V
8V
30
5
4
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
1000
10.0
Collector current vs. Collector-Emitter voltage (typ.)
800
600
400
200
8.0
6.0
4.0
2.0
0.0
0
0
5
0
MS5F6562
Vcc=300V, Ic=400A,Tj= 25℃
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
400
1
10
Tj= 125℃ / chip
Gate charge : Qg [ nC ]
Tj=25゚C / chip
VGE
VCE
2
800
VGE=20V15V
15
3
1200
20
12V
Ic=800A
Ic=400A
Ic=200A
10
H04-004-03a
4
10V
8V
14
1600
25
5
a