IRG7PH35UD1-EP International Rectifier, IRG7PH35UD1-EP Datasheet - Page 3

• Manufacturer Part Number: IRG7PH35UD1-EP
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD1-EP

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 179mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Collector Current Ic: 50A
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 1.15
• Pd @25c (w): 179
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 1 - Maximum DC Collector Current vs.
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 3 - Typical Gate Threshold Voltage
1.0
0.9
0.8
0.7
0.6
0.5
(Normalized) vs. Junction Temperature
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
25
25
0
T
Case Temperature
J
50
50
2
= -40°C; tp = 30µs
T J , Temperature (°C)
75
75
4
V CE (V)
T C (°C)
100
100
6
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
I C = 600µA
IRG7PH35UD1PbF/IRG7PH35UD1-EP
125
125
8
150
150
10
1000
Fig. 6 - Typ. IGBT Output Characteristics
200
175
150
125
100
100
75
50
25
10
80
70
60
50
40
30
20
10
Fig. 2 - Power Dissipation vs. Case
0
1
0
25
10
0
Fig. 4 - Reverse Bias SOA
T
T
J
50
J
2
= 25°C; tp = 30µs
Temperature
= 150°C; V
100
75
4
V CE (V)
V CE (V)
T C (°C)
GE
100
6
1000
= 20V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
125
8
10000
150
10
3