IRG7PH35UD1-EP International Rectifier, IRG7PH35UD1-EP Datasheet - Page 5

• Manufacturer Part Number: IRG7PH35UD1-EP
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD1-EP

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 179mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Collector Current Ic: 50A
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 1.15
• Pd @25c (w): 179
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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T
T
J
J
= 150°C; L = 680µH; V
= 150°C; L = 680µH; V
10000
2200
2000
1800
1600
1400
1200
1000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
1000
800
600
400
200
100
10
Fig. 17 - Typ. Capacitance vs. V
Fig. 15 - Typ. Energy Loss vs. R
Fig. 13 - Typ. Energy Loss vs. I
0
0
0
100
V
10
25
GE
Cres
= 0V; f = 1MHz
Coes
200
CE
E OFF
E OFF
Cies
CE
20
50
= 600V, R
= 600V, I
V CE (V)
Rg (Ω)
I C (A)
300
30
75
400
G
CE
= 10Ω; V
= 20A; V
IRG7PH35UD1PbF/IRG7PH35UD1-EP
100
40
C
500
CE
G
GE
125
600
50
GE
= 15V
= 15V
T
J
T
= 150°C; L = 680µH; V
J
= 150°C; L = 680µH; V
10000
1000
1000
100
100
10
10
16
14
12
10
Fig. 18 - Typical Gate Charge vs. V
Fig. 16 - Typ. Switching Time vs. R
8
6
4
2
0
Fig. 14 - Typ. Switching Time vs. I
0
0
0
I
20
CE
20
Q G , Total Gate Charge (nC)
10
= 20A; L = 2.4mH
V CES = 600V
V CES = 400V
40
CE
CE
40
= 600V, R
= 600V, I
td OFF
R G (Ω)
I C (A)
20
60
60
t F
80
CE
G
= 10Ω; V
30
= 20A; V
80
td OFF
100
t F
C
GE
G
GE
120
100
40
GE
= 15V
= 15V
5