J174-E3 Vishay, J174-E3 Datasheet - Page 5

P CHANNEL JFET, 30V, TO-92

J174-E3

Manufacturer Part Number
J174-E3
Description
P CHANNEL JFET, 30V, TO-92
Manufacturer
Vishay
Datasheet

Specifications of J174-E3

Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
10V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
-135mA
Channel Type
P
Configuration
Single
Gate-source Voltage (max)
30V
Drain-gate Voltage (max)
30V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
–40
–32
–16
–24
50
40
30
20
10
30
24
18
12
–8
0
6
0
0
0
0
0
t
ON
V
t
V
V
r
GS(off)
DD
GS(H)
approximately independent of I
Capacitance vs. Gate-Source Voltage
@ I
V
f = 1 MHz
T
125_C
DS
= –10 V, R
V
A
D
GS(off)
= –55_C
= 10 V, V
= 0 V
1
= 3 V
1
C
C
4
= –5 mA
t
iss
rss
V
r
V
Transfer Characteristics
@ I
GS
GS
– Gate-Source Cutoff Voltage (V)
Turn-On Switching
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
D
G
25_C
GS(L)
= –5 mA
= 220 W
2
8
2
= 0 V
t
ON
3
@ I
12
3
D
D
V
= –10 mA
DS
= –15 V
4
16
4
_
20
5
5
100 nA
100 pA
0.1 pA
J/SST174/175/176/177 Series
10 nA
10 pA
1 nA
1 pA
100
20
16
12
10
8
4
0
1
10
0
0
t
V
V
d(off)
T
T
DD
A
A
DS
= 125_C
= 25_C
= –10 V, V
= –10 V
V
–10
–3
Noise Voltage vs. Frequency
GS(off)
100
V
Gate Leakage Current
DG
Turn-Off Switching
I
= 1.5 V
D
– Drain-Gate Voltage (V)
–1 mA
GS(H)
– Drain Current (mA)
f – Frequency (Hz)
5 V
I
–20
D
–6
–10 mA
5 V
= –0.1 mA
= 10 V, V
–1 mA
t
I
GSS
1 k
f
Vishay Siliconix
V
GS(off)
@ 125_C
–30
GS(L)
–9
= 1.5 V
–10 mA
I
D
= 0 V
I
GSS
= –1 mA
10 k
–40
–12
@ 25_C
www.vishay.com
100 k
–15
–50
9-5

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