SST174-E3 Vishay, SST174-E3 Datasheet - Page 4

P CHANNEL JFET, 30V, SOT-23

SST174-E3

Manufacturer Part Number
SST174-E3
Description
P CHANNEL JFET, 30V, SOT-23
Manufacturer
Vishay
Datasheet

Specifications of SST174-E3

Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
10V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
-135mA
Transistor Type
JFET
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
J/SST174/175/176/177 Series
Vishay Siliconix
www.vishay.com
9-4
–1.6
–1.2
–0.8
–0.4
200
160
120
–25
–20
–15
–10
80
40
–2
–5
0
0
0
0
0
0
1.0 V
0.5 V
V
V
On-Resistance and Drain Current
V
GS
vs. Gate-Source Cutoff Voltage
GS(off)
–0.1
GS(off)
2
–4
= 0 V
r
V
DS
V
DS
Output Characteristics
DS
Output Characteristics
– Gate-Source Cutoff Voltage (V)
= 3 V
r
I
– Drain-Source Voltage (V)
DS
DSS
– Drain-Source Voltage (V)
@ I
–0.2
@ V
4
–8
D
= –1 mA, V
DS
= –15 V, V
–0.3
1.5 V
–12
6
GS
2.0 V
V
GS
= 0 V
I
GS(off)
DSS
= 0 V
–0.4
V
–16
8
GS
= 3 V
1.0 V
1.5 V
2.0 V
0.5 V
= 0 V
–0.5
10
–20
_
–100
–80
–60
–40
–20
0
18
15
12
250
200
150
100
300
240
180
120
9
6
3
50
60
Forward Transconductance and Output Conductance
0
0
–55
0
–1
g
V
fs
V
GS
GS(off)
I
r
and g
–35
D
DS
= 0 V, f = 1 kHz
T
= –1 mA
V
A
changes X 0.7%/_C
GS(off)
On-Resistance vs. Drain Current
= 25_C
On-Resistance vs. Temperature
g
V
2
= 1.5 V
os
vs. Gate-Source Cutoff Voltage
fs
GS(off)
–15
@ V
– Gate-Source Cutoff Voltage (V)
g
= 1.5 V
I
DS
T
D
os
A
5
– Drain Current (mA)
= –15 V
– Temperature (_C)
4
3 V
25
–10
45
3 V
6
5 V
65
S-04030—Rev. E, 04-Jun-01
Document Number: 70257
85
5 V
8
105
10
–100
125
250
200
150
100
50
0

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