SST174-E3 Vishay, SST174-E3 Datasheet - Page 5

• Manufacturer Part Number: SST174-E3
• Description: P CHANNEL JFET, 30V, SOT-23
• Manufacturer: Vishay

Specifications of SST174-E3

• Breakdown Voltage Vbr: 30V
• Gate-source Cutoff Voltage Vgs(off) Max: 10V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: -135mA
• Transistor Type: JFET
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70257
S-04030—Rev. E, 04-Jun-01
50
40
30
20
10
30
24
18
12
0
6
0
0
0
t
ON
t
V
V
r
DD
GS(H)
approximately independent of I
Capacitance vs. Gate-Source Voltage
@ I
V
f = 1 MHz
T
125_C
DS
= –10 V, R
V
A
D
GS(off)
= –55_C
= 10 V, V
= 0 V
1
C
C
4
= –5 mA
t
iss
rss
r
V
Transfer Characteristics
@ I
GS
– Gate-Source Cutoff Voltage (V)
Turn-On Switching
– Gate-Source Voltage (V)
D
G
GS(L)
= –5 mA
= 220 W
2
8
= 0 V
t
ON
3
@ I
12
D
D
= –10 mA
4
16
_
20
5
100 nA
100 pA
0.1 pA
J/SST174/175/176/177 Series
10 nA
10 pA
1 nA
1 pA
100
20
16
12
10
8
4
0
1
10
0
0
t
V
V
d(off)
DD
DS
= –10 V, V
= –10 V
V
–10
–3
Noise Voltage vs. Frequency
GS(off)
100
V
Gate Leakage Current
DG
Turn-Off Switching
I
= 1.5 V
D
– Drain-Gate Voltage (V)
–1 mA
GS(H)
– Drain Current (mA)
f – Frequency (Hz)
5 V
I
–20
D
–6
5 V
= –0.1 mA
= 10 V, V
t
1 k
f
Vishay Siliconix
V
GS(off)
–30
GS(L)
–9
= 1.5 V
= 0 V
10 k
–40
–12
www.vishay.com
100 k
–15
–50
9-5