SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4562DY-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4562DY-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.1 A, - 6.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70717
S09-0867-Rev. C, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
32
24
16
5
4
3
2
1
0
8
0
0
0
0
V
GS
V
I
D
On-Resistance vs. Drain Current
DS
= 6.2 A
= 2.5 V
8
= 10 V
5
1
V
Output Characteristics
DS
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
Gate Charge
D
- Drain Current (A)
16
10
2
V
GS
= 5 V, 4.5 V, 4 V, 3.5 V
24
15
V
3
GS
= 4.5 V
32
20
4
2.5 V
1.5 V
3 V
2 V
40
25
5
4500
3600
2700
1800
900
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
- 50
8
0
0
0
0
- 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 6.2 A
= 4.5 V
4
V
V
Transfer Characteristics
T
DS
0
GS
J
1
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
Capacitance
25
oss
8
T
C
50
Vishay Siliconix
C
iss
2
= - 55 °C
12
75
Si4562DY
www.vishay.com
C
100
rss
3
16
125 °C
125
25 °C
150
20
4
5