2N7002BKV NXP Semiconductors, 2N7002BKV Datasheet - Page 2

• Manufacturer Part Number: 2N7002BKV
• Description: MOSFET,NN CH,60V,0.34A,SOT666
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BKV

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Power Dissipation: RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
2N7002BKV
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number Package
2N7002BKV
Type number
2N7002BKV
Symbol
Per transistor
V
V
I
I
D
DM
DS
GS
Symbol
S1
G1
D2
S2
G2
D1
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
Description
source 1
gate 1
drain 2
source 2
gate 2
drain 1
Description
plastic surface-mounted package; 6 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
60 V, 340 mA dual N-channel Trench MOSFET
= 25 °C
= 100 °C
Marking code
ZG
p
≤ 10 μs
Simplified outline
1
6
5
2
[1]
3
4
Min
-
-
-
-
-
2N7002BKV
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
3
1
Max
60
±20
340
240
1.2
017aaa055
Version
SOT666
Unit
V
V
mA
mA
A
2 of 16
6
5
4