IRF730APBF Vishay, IRF730APBF Datasheet - Page 2

• Manufacturer Part Number: IRF730APBF
• Description: N CHANNEL MOSFET, 400V, 5.5A TO-220
• Manufacturer: Vishay

Specifications of IRF730APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF730APBF

Avalanche Characteristics
Static @ T
Thermal Resistance
Document Number: 91045
Dynamic @ T
Diode Characteristics
V
∆V
R
V
I
E
I
E
R
R
R
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
GSS
AR
S
on
d(on)
d(off)
f
SM
r
rr
fs
AS
AR
DS(on)
θCS
θJA
(BR)DSS
GS(th)
θJC
SD
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
400
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
3.1
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
–––
–––
600
103
890
–––
–––
–––
370
0.5
4.0
1.6
10
22
20
16
30
45
–––
–––
250
–––
550
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
4.5
1.6
2.4
5.8
9.3
25
5.5
22
22
V/°C
µC
µA
nA
nC
ns
pF
ns
Ω
V
V
S
V
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
I
V
V
V
I
R
R
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
Reference to 25°C, I
D
D
GS
GS
DS
DS
DS
GS
GS
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 3.5A
= 3.5A
= 25°C, I
= 25°C, I
= 12Ω
= 57Ω,See Fig. 10
= 400V, V
= 0V, I
= 10V, I
= V
= 320V, V
= 30V
= -30V
= 50V, I
= 320V
= 0V
= 25V
= 10V, See Fig. 6 and 13 „
= 200V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 5.5A, V
= 3.5A
Conditions
Conditions
= 3.3A
= 3.3A „
= 250µA
GS
GS
= 0V to 320V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 320V, ƒ = 1.0MHz
1.70
290
–––
5.5
7.4
62
= 0V
= 0V, T
D
www.vishay.com
= 1mA
GS
„
J
G
= 0V „
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
62
A
D
S
D
)
2