IRF740LCPBF Vishay, IRF740LCPBF Datasheet
IRF740LCPBF
Specifications of IRF740LCPBF
Related parts for IRF740LCPBF
IRF740LCPBF Summary of contents
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... Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs ofter the designer a new standard in power transistors for switching applications. TO-220AB IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC = 25 °C, unless otherwise noted) C ...
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... IRF740LC, SiHF740LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Transfer Characteristics C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 150 °C 0 91053_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( ...
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... IRF740LC, SiHF740LC Vishay Siliconix 2000 MHz iss 1600 rss gd C iss oss ds 1200 C oss 800 400 C rss Drain-to-Source Voltage ( 91053_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 320 200 Total Gate Charge (nC) 91053_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 150 125 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF740LC, SiHF740LC Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91053_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91053. Document Number: 91053 S11-0507-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...