IRF7410PBF International Rectifier, IRF7410PBF Datasheet

IRF7410PBF

Manufacturer Part Number

IRF7410PBF

Description

P CHANNEL MOSFET, -12V, 16A, SOIC

Manufacturer

International Rectifier

Datasheets

1.IRF7410PBF.pdf (9 pages)

2.IRF7410PBF.pdf (4 pages)

Specifications of IRF7410PBF

Transistor Polarity

P Channel

Continuous Drain Current Id

-16A

Drain Source Voltage Vds

-12V

On Resistance Rds(on)

7mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-900mV

Channel Type

Current, Drain

-16 A

Gate Charge, Total

91 nC

Package Type

SO-8

Polarization

P-Channel

Power Dissipation

2.5 W

Resistance, Drain To Source On

7 Milliohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

271 ns

Time, Turn-on Delay

13 ns

Transconductance, Forward

55 S

Voltage, Breakdown, Drain To Source

-12 V

Voltage, Drain To Source

–12 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±8 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Thermal Resistance

These P-Channel HEXFET

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering technique

Description

www.irf.com

θJA

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

STG

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Power MOSFETs from

Parameter

@ -4.5V

-12V

DSS

Top View

HEXFET Power MOSFET

13mΩ@V

7mΩ@V

9mΩ@V

IRF7410PbF

-55 to +150

Max.

DS(on)

-12

-16

-13

-65

2.5

1.6

±8

max

= -4.5V

= -2.5V

= -1.8V

SO-8

13.6A

11.5A

16A

mW/°C

11/17/08

Units

°C/W

°C

Related parts for IRF7410PBF

IRF7410PBF Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -12V Top View @ -4. -4.5V GS ƒ ƒ ƒ IRF7410PbF HEXFET Power MOSFET R max I DS(on) D 7mΩ@V = -4.5V 16A - GS 9mΩ@V = -2.5V 13. 13mΩ@V = -1.8V 11. SO-8 Max. ...

Page 2

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150° ...

Page 4

0V MHZ C iss = SHORTED 12000 C rss = oss = 10000 Ciss 8000 6000 4000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 (THERMAL RESPONSE) ...

Page 6

-16A 0.004 0.002 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 700 600 500 -250µA 400 300 200 100 0 0.0001 0.0010 ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dÃ IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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