IXFH12N90P IXYS SEMICONDUCTOR, IXFH12N90P Datasheet

MOSFET,N CH,900V,12A,TO-247

IXFH12N90P

Manufacturer Part Number
IXFH12N90P
Description
MOSFET,N CH,900V,12A,TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of IXFH12N90P

Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
900mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
PLUS220 types
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFH12N90P
IXFV12N90P
IXFV12N90PS
11..65/2.5..14.6
900
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.13/10
± 30
± 40
900
900
500
380
150
300
260
Typ.
12
24
15
6
6
4
± 100
900
Max.
Nm/lb.in.
6.5
25
1 mA
N/lb.
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
V
g
V
I
R
t
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
Features
Advantages
Applications:
G = Gate
S = Source
D25
rr
International standard packages
Avalanche Rated
Low package inductance
Fast intrinsic diode
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
= 900V
= 12A
≤ ≤ ≤ ≤ ≤ 900mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
S
D
TAB = Drain
= Drain
D (TAB)
D (TAB)
D (TAB)
DS100056(10/08)

Related parts for IXFH12N90P

IXFH12N90P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFH12N90P IXFV12N90P IXFV12N90PS Maximum Ratings 900 = 1MΩ 900 GS ± 30 ± 500 ≤ 150° 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14.6 ...

Page 2

... I = 0.5 • DSS D D25 27 0.25 Characteristic Values Min. Typ. JM 0.9 7.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH12N90P IXFV12N90P IXFV12N90PS PLUS220 (IXFV) Outline Max. S Ω 0.33 °C/W °C/W Max TO-247 (IXFH) Outline 1.5 V 300 ns μ ...

Page 3

... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V Value 125º 25º IXFH12N90P IXFV12N90P Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.2 3 10V GS 2.8 2.6 2 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ...

Page 4

... MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC - 40ºC 7.0 7.5 8.0 8 25ºC J 0.8 0.9 1.0 1.1 1.00 C iss 0.10 C oss C rss 0. IXFH12N90P IXFV12N90P Fig. 8. Transconductance 40º Amperes D Fig. 10. Gate Charge 450V 10mA G 12 ...

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