IXFH12N90P IXYS SEMICONDUCTOR, IXFH12N90P Datasheet - Page 3

• Manufacturer Part Number: IXFH12N90P
• Description: MOSFET,N CH,900V,12A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH12N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

© 2008 IXYS CORPORATION, All rights reserved
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
12
11
10
12
11
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
0
Fig. 5. R
2
V
2
1
GS
= 10V
4
4
2
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
6
DS(on)
6
3
8
vs. Drain Current
8
4
Normalized to I
10
V
I
10
V
DS
D
@ 125ºC
@ 25ºC
DS
- Amperes
5
12
- Volts
- Volts
12
14
6
14
V
T
V
16
GS
J
GS
7
= 125ºC
16
= 10V
= 10V
18
D
8V
7V
6V
8V
7V
6V
5V
8
= 6A Value
18
20
9
20
T
22
J
= 25ºC
10
22
24
11
24
26
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
13
12
11
10
24
22
20
18
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
-50
-50
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
-25
Fig. 6. Maximum Drain Current vs.
= 10V
5
IXFH12N90P IXFV12N90P
vs. Junction Temperature
DS(on)
0
0
Case Temperature
T
10
T
C
J
Normalized to I
- Degrees Centigrade
25
25
- Degrees Centigrade
V
DS
@ 25ºC
- Volts
50
15
50
V
I
D
GS
75
75
= 12A
IXFV12N90PS
= 10V
20
D
8V
7V
6V
5V
= 6A Value
100
100
I
25
D
= 6A
125
125
150
150
30