IXFH12N90P IXYS SEMICONDUCTOR, IXFH12N90P Datasheet - Page 4

• Manufacturer Part Number: IXFH12N90P
• Description: MOSFET,N CH,900V,12A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH12N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
14
12
10
35
30
25
20
15
10
10
8
6
4
2
0
5
0
4.5
0.3
0
f
= 1 MHz
5.0
0.4
5
Fig. 9. Forward Voltage Drop of
5.5
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
Intrinsic Diode
T
0.6
6.0
15
J
V
V
V
= 125ºC
SD
DS
GS
T
- Volts
- Volts
- Volts
J
0.7
6.5
= 125ºC
20
- 40ºC
25ºC
0.8
7.0
25
C iss
C oss
C rss
0.9
7.5
30
T
J
= 25ºC
1.0
8.0
35
1.1
8.5
40
1.00
0.10
0.01
16
14
12
10
14
12
10
0.00001
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
= 6A
= 10mA
10
Fig. 12. Maximum Transient Thermal
= 450V
0.0001
2
IXFH12N90P IXFV12N90P
Fig. 8. Transconductance
20
4
Fig. 10. Gate Charge
0.001
Q
Pulse Width - Seconds
G
30
I
- NanoCoulombs
D
Impedance
- Amperes
6
0.01
40
T
8
J
= - 40ºC
50
IXFV12N90PS
0.1
10
25ºC
60
IXYS REF: F_12N90P(65)10-22-08
125ºC
1
12
70
14
10
80