IXFH24N90P IXYS SEMICONDUCTOR, IXFH24N90P Datasheet - Page 4

• Manufacturer Part Number: IXFH24N90P
• Description: MOSFET,N CH,900V,24A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH24N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 420mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
100
80
70
60
50
40
30
20
10
30
25
20
15
10
10
0
5
0
0.3
4.5
0
f
0.4
5.0
= 1MHz
5
Fig. 9. Forward Voltage Drop of
0.5
5.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
0.6
6.0
J
Intrinsic Diode
= 125ºC
15
V
V
V
SD
DS
GS
T
0.7
6.5
J
- Volts
- Volts
= 125ºC
- Volts
- 40ºC
20
25ºC
0.8
7.0
25
0.9
C rss
7.5
C iss
C oss
T
J
= 25ºC
30
1.0
8.0
35
1.1
8.5
1.2
9.0
40
1.00
0.10
0.01
30
25
20
15
10
16
14
12
10
0.0001
5
0
8
6
4
2
0
0
0
2
V
I
I
D
G
DS
20
= 12A
= 10mA
Fig. 12. Maximum Transient Thermal
4
= 450V
0.001
6
40
Fig. 8. Transconductance
8
Fig. 10. Gate Charge
10 12 14 16 18 20 22 24 26 28 30 32
Q
Pulse Width - Seconds
60
G
- NanoCoulombs
0.01
Impedance
I
D
80
- Amperes
100
0.1
T
J
= - 40ºC
120
IXFT24N90P
IXFH24N90P
25ºC
125ºC
IXYS REF: F_24N90P (85)10-23-08
140
1
160
180
10