IXTX90N25L2 IXYS SEMICONDUCTOR, IXTX90N25L2 Datasheet

MOSFET,N CH,250V,90A,ISOPLUS247

IXTX90N25L2

Manufacturer Part Number
IXTX90N25L2
Description
MOSFET,N CH,250V,90A,ISOPLUS247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of IXTX90N25L2

Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
PLUS247
Rohs Compliant
Yes
LinearL2
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
A
GSS
DSS
© 2008 IXYS CORPORATION, All rights reserved
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
Power
GS
DSS
, I
D
D
D
= 1mA
= 3mA
= 0.5 • I
DS
= 0V
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTK90N25L2
IXTX90N25L2
20..120 / 4.5..27
250
2.0
Min.
-55...+150
-55...+150
Maximum Ratings
Characteristic Values
1.13/10
250
250
±20
±30
360
960
150
300
260
Typ.
90
45
10
3
6
±200
Max.
4.5
Nm/lb.in.
2.5 mA
33 mΩ
50
N/lb.
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264
PLUS247
G = Gate
S = Source
Features
Advantages
Applications
D25
Designed for linear operation
International standard packages
Avalanche rated
Guaranteed FBSOA at 75°C
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
D
S
D
S
= 90A
< 33mΩ Ω Ω Ω Ω
= 250V
D
TAB = Drain
= Drain
DS100080(11/08)
(TAB)
(TAB)

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IXTX90N25L2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTK90N25L2 IXTX90N25L2 Maximum Ratings 250 = 1MΩ 250 GS ±20 ±30 90 360 960 -55...+150 150 -55...+150 300 260 1.13/10 20..120 / 4.5.. Characteristic Values Min. Typ. ...

Page 2

... Characteristic Values Min. Typ. = 75° 575 C Characteristic Values Min. Typ. JM 266 23 3.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK90N25L2 IXTX90N25L2 TO-264 (IXTK) Outline Max 0.13 °C/W °C/W Max. W PLUS 247 (IXTX) Outline TM Max 360 A 1 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º 20V GS 14V 12V 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade C IXTK90N25L2 IXTX90N25L2 45A Value D = 90A I = 45A D 75 100 125 150 75 100 125 150 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 125V 45A 10mA 100 200 300 400 500 600 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTK90N25L2 IXTX90N25L2 40ºC J 25ºC 125ºC 100 120 140 700 800 900 1000 0 ...

Page 5

... Single Pulse 1 10 100 V - Volts DS © 2008 IXYS CORPORATION, All rights reserved 1,000 25µs 100 100µs 1ms 10 10ms 100ms DC 1 1000 10 IXTK90N25L2 IXTX90N25L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75º Single Pulse 100 V - Volts DS 25µs 100µ ...

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