SI1032R-T1-GE3 Vishay, SI1032R-T1-GE3 Datasheet

N CHANNEL MOSFET, 20V, 140mA SC-75A

SI1032R-T1-GE3

Manufacturer Part Number
SI1032R-T1-GE3
Description
N CHANNEL MOSFET, 20V, 140mA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1032R-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
700mV
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Voltage Vgs Max
6V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SC-89
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1032R-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1032R-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
60 867
Part Number:
SI1032R-T1-GE3
Manufacturer:
LT
Quantity:
213
Part Number:
SI1032R-T1-GE3
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
SI1032R-T1-GE3,,18578,SC-70,VBSEMI
0
Company:
Part Number:
SI1032R-T1-GE3,,2189,SC-75A,VISHAY,,,,19+
0
Company:
Part Number:
SI1032R-T1-GE3,,33450,SOT-523,VISHAY
0
Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
0
Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
0
Notes:
a. Surface mounted on FR4 board.
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V
G
S
Ordering Information:
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free)
DS
20
(V)
1
2
SC-75A or SC-89
Top View
10 at V
a
5 at V
7 at V
9 at V
R
DS(on)
3
GS
GS
GS
GS
J
a
= 150 °C)
for SC-75
= 4.5 V
= 2.5 V
= 1.8 V
D
= 1.5 V
()
Marking Code: G
N-Channel 1.5 V (G-S) MOSFET
a
T
T
T
T
a
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
I
D
A
200
175
150
(mA)
50
= 25 °C, unless otherwise noted)
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Low-Side Switching
• Low On-Resistance: 5 
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns
• TrenchFET
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
200
110
250
280
145
5 s
Definition
Memories
Si1032R
500
Steady State
®
140
100
200
250
130
Power MOSFETs: 1.5 V Rated
- 55 to 150
2000
± 6
20
210
150
300
340
170
5 s
Si1032X
Vishay Siliconix
600
Steady State
Si1032R/X
200
140
240
300
150
www.vishay.com
Unit
mW
mA
°C
V
V
1

SI1032R-T1-GE3 Summary of contents

Page 1

... V GS SC-75A or SC- Marking Code: G Top View Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si1032R/X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) A Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Surge-Drain Diode Forward Voltage Document Number: 71172 S10-2544-Rev. F, 08-Nov- °C, unless otherwise noted 150 200 250 0.6 0.8 1.0 1.2 1 Si1032R/X Vishay Siliconix 100 MHz 80 C iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1. 200 175 mA D 1.00 ...

Page 4

... Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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