SI1032R-T1-GE3 Vishay, SI1032R-T1-GE3 Datasheet - Page 2

N CHANNEL MOSFET, 20V, 140mA SC-75A

SI1032R-T1-GE3

Manufacturer Part Number
SI1032R-T1-GE3
Description
N CHANNEL MOSFET, 20V, 140mA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1032R-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
700mV
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Voltage Vgs Max
6V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SC-89
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1032R-T1-GE3TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI1032R-T1-GE3
Manufacturer:
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Quantity:
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Part Number:
SI1032R-T1-GE3,,18578,SC-70,VBSEMI
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Part Number:
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Part Number:
SI1032R-T1-GE3,,33450,SOT-523,VISHAY
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Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
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Company:
Part Number:
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Si1032R/X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
0.5
0.4
0.3
0.2
0.1
0.0
0
1
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
A
2
= 25 °C, unless otherwise noted)
a
3
Symbol
R
V
V
I
t
t
GS
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
SD
t
fs
gs
gd
r
f
g
= 5 V thru 1.8 V
4
A
= 25 °C, unless otherwise noted)
I
V
5
D
DS
V
 200 mA, V
1 V
DS
= 10 V, V
V
V
V
V
V
= 20 V, V
V
V
V
I
V
V
V
S
DS
GS
GS
GS
DS
DS
6
GS
DS
DS
DD
DS
= 150 mA, V
Test Conditions
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 0 V, V
= 0 V, V
= 10 V, I
= V
= 1.5 V, I
= 5 V, V
= 20 V, V
= 10 V, R
GS
GS
GEN
GS
= 4.5 V, I
, I
GS
GS
= 0 V, T
D
D
= 4.5 V, R
GS
D
D
D
D
= 200 mA
= 250 µA
GS
= 200 mA
= 175 mA
= 150 mA
L
= ± 4.5 V
GS
= ± 2.8 V
= 40 mA
= 4.5 V
= 47 
= 0 V
= 0 V
D
J
= 250 mA
= 55 °C
g
= 10 
600
500
400
300
200
100
0
0.0
0.5
Min.
0.40
250
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.0
± 0.5
± 1.0
Typ.
750
225
0.7
0.5
75
T
S10-2544-Rev. F, 08-Nov-10
J
= - 55 °C
Document Number: 71172
1.5
Max.
± 1.0
± 3.0
1.2
1.2
125 °C
10
10
50
25
50
25
1
5
7
9
2.0
25 °C
Unit
mA
µA
pC
ns
V
S
V
2.5