SI1032R-T1-GE3 Vishay, SI1032R-T1-GE3 Datasheet - Page 3

N CHANNEL MOSFET, 20V, 140mA SC-75A

SI1032R-T1-GE3

Manufacturer Part Number
SI1032R-T1-GE3
Description
N CHANNEL MOSFET, 20V, 140mA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1032R-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
700mV
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Voltage Vgs Max
6V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SC-89
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1032R-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1032R-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
60 867
Part Number:
SI1032R-T1-GE3
Manufacturer:
LT
Quantity:
213
Part Number:
SI1032R-T1-GE3
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
SI1032R-T1-GE3,,18578,SC-70,VBSEMI
0
Company:
Part Number:
SI1032R-T1-GE3,,2189,SC-75A,VISHAY,,,,19+
0
Company:
Part Number:
SI1032R-T1-GE3,,33450,SOT-523,VISHAY
0
Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
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Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
0
TYPICAL CHARACTERISTICS (T
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
1000
100
50
40
30
20
10
10
0
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
DS
= 150 mA
0.2
Surge-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 10 V
T
50
J
V
= 25 °C
0.2
SD
Q
0.4
g
- S
I
T
D
- Total Gate Charge (nC)
J
- Drain Current (mA)
o
= 125 °C
Gate Charge
u
100
c r
0.6
e
t -
- o
0.4
T
J
D
V
= 50 °C
a r
0.8
GS
n i
150
V
= 1.8 V
o
a t l
1.0
g
A
e
0.6
V
= 25 °C, unless otherwise noted)
(
GS
) V
200
V
GS
= 4.5 V
1.2
= 2.5 V
250
0.8
1.4
1.60
1.40
1.20
1.00
0.80
0.60
100
80
60
40
20
50
40
30
20
10
0
0
- 50
0
0
I
D
C
On-Resistance vs. Gate-to-Source Voltage
rss
= 175 mA
On-Resistance vs. Junction Temperature
- 25
V
f = 1 MHz
1
GS
4
V
V
= 0 V
DS
T
GS
C
J
oss
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
2
D
Capacitance
= 200 mA
8
25
V
I
D
C
GS
iss
= 200 mA
3
= 4.5 V
Vishay Siliconix
50
12
Si1032R/X
4
75
V
I
D
GS
www.vishay.com
= 175 mA
16
= 1.8 V
100
5
125
20
6
3