SI8429DB-T1-E1 Vishay, SI8429DB-T1-E1 Datasheet

P CH MOSFET, -8V, 10.2A, MICRO FOOT

SI8429DB-T1-E1

Manufacturer Part Number
SI8429DB-T1-E1
Description
P CH MOSFET, -8V, 10.2A, MICRO FOOT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8429DB-T1-E1

Transistor Polarity
P Channel
Continuous Drain Current Id
-10.2A
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
98mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
-600mV
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
11.7A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1640pF @ 4V
Power - Max
6.25W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.043 Ohms
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
- 7.8 A
Power Dissipation
2.77 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI8429DB-T1-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8429DB-T1-E1
Manufacturer:
Vishay/Siliconix
Quantity:
146 243
Part Number:
SI8429DB-T1-E1
Manufacturer:
CIRRUS
Quantity:
105
Part Number:
SI8429DB-T1-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI8429DB-T1-E1
Quantity:
36 000
Company:
Part Number:
SI8429DB-T1-E1
Quantity:
18 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 74399
S-82119-Rev. C, 08-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
- 8
(V)
3
4
Bump Side View
D
S
Device Marking: 8429
Ordering Information: Si8429DB-T1-E1 (Lead (Pb)-free)
C
= 25 °C.
0.035 at V
0.042 at V
0.052 at V
0.069 at V
0.098 at V
R
DS(on)
MICRO FOOT
G
D
GS
GS
GS
GS
GS
2
1
d
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
= - 1.2 V
J
xxx = Date/Lot Traceability Code
= 150 °C)
P-Channel 1.2-V (G-S) MOSFET
Backside View
8429
xxx
I
- 11.7
- 10.7
- 1.02
D
- 9.6
- 8.3
(A)
a
A
= 25 °C, unless otherwise noted
Q
IR/Convection
g
21 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Industry First 1.2 V Rated MOSFET
• Ultra Small MICRO FOOT
• Low Threshold Load Switch for Portable Devices
• Ultra Low Voltage Load Switch
G
Symbol
T
J
Packaging Reduces Footprint Area,
Profile (0.62 mm) and On-Resistance Per
Footprint Area
- Low Power Consumption
- Increased Battery Life
V
V
I
P-Channel MOSFET
P
, T
I
DM
I
DS
GS
D
S
D
stg
S
D
®
Power MOSFET
- 55 to 150
- 7.8
- 6.3
- 2.5
2.77
1.77
- 11.7
Limit
- 9.4
- 5.7
6.25
- 25
260
± 5
- 8
4
b, c
b, c
b, c
b, c
b, c
®
Chipscale
Vishay Siliconix
Si8429DB
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SI8429DB-T1-E1

SI8429DB-T1-E1 Summary of contents

Page 1

... Backside View Device Marking: 8429 xxx = Date/Lot Traceability Code Ordering Information: Si8429DB-T1-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si8429DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74399 S-82119-Rev. C, 08-Sep-08 Symbol Test Conditions ° dI/dt = 100 A/µ ° Si8429DB Vishay Siliconix Min. Typ. Max. Unit - 2 0.7 - 1.1 V 150 250 ns 150 230 www.vishay.com 3 ...

Page 4

... Si8429DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 1 0.06 0.05 0.04 0.03 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1 1.5 2.0 2 ...

Page 5

... Limited DS(on D(on) 1 Limited 0 °C A Single Pulse BV DSS 0. Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si8429DB Vishay Siliconix 0. 0.07 0. 125 ° °C A 0.04 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...

Page 6

... Si8429DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Foot Temperature (°C) F Current Derating Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 6 * The power dissipation P junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used ...

Page 7

... Note 3 ∼ Solder Mask φ 0. Diamerter E a Millimeters Max. 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Si8429DB Vishay Siliconix Silicon Bump Note Inches Min. Max. 0.0236 0.0256 0.0102 0.0114 0.0134 0.0142 0.0146 0.0161 0.0598 0.0630 0.0598 0.0630 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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