TN0200K-T1-E3 Vishay, TN0200K-T1-E3 Datasheet
TN0200K-T1-E3
Specifications of TN0200K-T1-E3
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TN0200K-T1-E3 Summary of contents
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... TO-236 (SOT-23 Top View Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) b Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
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... TN0200K Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72678 S-71198–Rev. B, 18-Jun-07 New Product 0.9 1.2 1.5 0.8 1.0 1.2 1.4 TN0200K Vishay Siliconix 200 175 150 125 C iss 100 oss C rss – Drain-to-Source Voltage (V) ...
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... TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0 0.0 - 0.1 - 0.2 - 0 – Temperature ( C) J Threshold Voltage 0.01 0.1 1 Time (sec) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Effective Transient Thermal Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...