IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 7
IRFB17N50LPBF
Manufacturer Part Number
IRFB17N50LPBF
Description
N CHANNEL MOSFET, 500V, 16A, TO-220
Manufacturer
Vishay
Specifications of IRFB17N50LPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
320mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2760pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.32 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
220000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB17N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB17N50LPBF
Manufacturer:
ST
Quantity:
6 000
Document Number: 91098
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
®
Power MOSFETs
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
*
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