BUK6209-30C NXP Semiconductors, BUK6209-30C Datasheet
BUK6209-30C
Specifications of BUK6209-30C
Related parts for BUK6209-30C
BUK6209-30C Summary of contents
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... BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 1 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C Min Max - 30 [1] -20 20 [2] -16 16 [3] Figure Figure 262 - 80 -55 175 -55 175 [ ...
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... Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C 100 150 Normalized total power dissipation as a function of mounting base temperature = 10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6209-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C Min Typ Max - - 1.87 003aae795 t P δ ...
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... Figure Ω Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... V DS 003aae784 ( (A) D Fig 6. 003aae786 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C N-channel TrenchMOS intermediate level FET Min Typ - 0 200 10.0 150 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... Fig 10. Sub-threshold drain current as a function of 003aae790 a 4.5 5.0 6.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C N-channel TrenchMOS intermediate level FET -1 -2 min typ max - gate-source voltage 2 1 ...
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... GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae793 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C N-channel TrenchMOS intermediate level FET ( 14V 24V charge; typical values ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C N-channel TrenchMOS intermediate level FET min 10.4 2.95 2.285 4.57 0.5 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6209-30C v.2 20101001 • Modifications: Status changed from objective to product. BUK6209-30C v.1 20100908 BUK6209-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 October 2010 BUK6209-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 October 2010 Document identifier: BUK6209-30C ...