PSMN045-80YS NXP Semiconductors, PSMN045-80YS Datasheet - Page 8

• Manufacturer Part Number: PSMN045-80YS
• Description: MOSFET,N CH,80V,24A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN045-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 37mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN045-80YS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
R
(mΩ)
(V)
100
DSon
80
60
40
20
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
5
0
10
60
max
min
typ
120
15
All information provided in this document is subject to legal disclaimers.
V
003aad054
003aad280
T
GS
j
(°C)
(V)
Rev. 02 — 25 October 2010
180
20
N-channel LFPAK 80 V 45 mΩ standard level MOSFET
Fig 10. Transfer characteristics: drain current as a
Fig 12. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
(A)
40
30
20
10
I
−1
−2
−3
−4
−5
−6
D
0
function of gate-source voltage; typical values
gate-source voltage
0
0
T
2
j
= 175 °C
2
PSMN045-80YS
min
4
typ
25 °C
4
6
max
V
© NXP B.V. 2010. All rights reserved.
GS
V
003aad048
GS
(V)
03aa35
(V)
8
6
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