IRF634STRLPBF Vishay, IRF634STRLPBF Datasheet

N CH MOSFET, 250V, 8.1A, SMD-220

IRF634STRLPBF

Manufacturer Part Number
IRF634STRLPBF
Description
N CH MOSFET, 250V, 8.1A, SMD-220
Manufacturer
Vishay
Datasheet

Specifications of IRF634STRLPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
8.1A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91035
S10-2695-Rev. B, 29-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(V)
(nC)
()
K
D
2
PAK (TO-263)
a
D
a
G
S
a
b
V
GS
e
= 10 V
G
N-Channel MOSFET
e
Single
250
6.5
41
22
D
SiHF634S-GE3
IRF634SPbF
SiHF634S-E3
IRF634S
SiHF634S
2
C
D
S
PAK (TO-263)
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.45
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
accommodating die size up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
2
Definition
PAK is suitable for high current applications because of
2
PAK is a surface mount power package capable of
power
SYMBOL
V
V
E
E
I
I
P
device
DM
I
AR
GS
DS
AS
AR
D
D
capability
D
SiHF634STRR-GE3
IRF634STRRPbF
SiHF634STR-E3
-
-
2
PAK (TO-263)
design,
IRF634S, SiHF634S
and
LIMIT
0.025
± 20
0.59
250
300
8.1
5.1
8.1
7.4
3.1
32
74
low
a
a
Vishay Siliconix
the
a
on-resistance
lowest
www.vishay.com
UNIT
W/°C
possible
mJ
mJ
W
V
A
A
and
1

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IRF634STRLPBF Summary of contents

Page 1

... Fast Switching Single • Ease of Paralleling • Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. 2 The D PAK is a surface mount power package capable of accommodating die size up to HEX-4 ...

Page 2

... IRF634S, SiHF634S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 7.3 mH  8.1 A, dI/dt  120 A/μs, V  ...

Page 3

... S showing the integral reverse junction diode ° 8 ° 5.6 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated 4 ° 91035_02 = 25 °C Fig Typical Output Characteristics IRF634S, SiHF634S Vishay Siliconix MIN. TYP 220 Top 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 µs Pulse Width ...

Page 4

... IRF634S, SiHF634S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width - Gate-to-Source Voltage ( 91035_03 Fig Typical Transfer Characteristics 3 5 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 T Junction Temperature (° 91035_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 1750 1400 1050 700 ...

Page 5

... V , Drain-to-Source Voltage (V) 91035_08 DS Fig Maximum Safe Operating Area Document Number: 91035 S10-2695-Rev. B, 29-Nov- 1.2 1.0 91035_09 Fig Maximum Drain Current vs. Case Temperature 10 µs 100 µ IRF634S, SiHF634S Vishay Siliconix 100 125 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...

Page 6

... IRF634S, SiHF634S Vishay Siliconix 10 0 − 0.5 1 0.2 0.1 0.05 0.1 0.02 0. 91035_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91035_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration (s) ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91035. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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