IRF9520STRRPBF Vishay, IRF9520STRRPBF Datasheet

P CH MOSFET, -100V, 6.8A, D2-PAK

IRF9520STRRPBF

Manufacturer Part Number
IRF9520STRRPBF
Description
P CH MOSFET, -100V, 6.8A, D2-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9520STRRPBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-6.8A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
3.7 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91075
S10-1728-Rev. B, 02-Aug-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
G D
(nC)
(V)
(nC)
 - 6.8 A, dI/dt  110 A/μs, V
= - 25 V, starting T
D
()
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 9.7 mH, R
c
a
b
V
GS
DD
= - 10 V
e
 V
G
DS
P-Channel MOSFET
, T
e
D
IRF9520SPbF
SiHF9520S-E3
IRF9520S
SiHF9520S
SiHF9520S-GE3
Single
- 100
2
J
3.0
9.0
18
PAK (TO-263)
 175 °C.
g
S
D
C
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.60
GS
at - 10 V
AS
T
T
= - 6.8 A (see fig. 12).
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Definition
D
SiHF9520STRL-GE3
IRF9520STRLPbF
SiHF9520STL-E3
IRF9520STRL
SiHF9520STL
2
PAK (TO-263)
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
a
D
a
D
stg
2
PAK (TO-263) is suitable for high current
a
a
IRF9520S, SiHF9520S
a
design,
- 55 to + 175
LIMIT
0.025
- 100
D
SiHF9520STRR-GE3
IRF9520STRRPbF
SiHF9520STR-E3
-
-
300
± 20
- 6.8
- 4.8
0.40
- 6.8
- 5.5
- 27
300
6.0
3.7
60
low
2
PAK (TO-263)
Vishay Siliconix
d
on-resistance
www.vishay.com
a
a
UNIT
W/°C
a
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF9520STRRPBF Summary of contents

Page 1

... °C A for  6.8 A (see fig. 12  175 ° IRF9520S, SiHF9520S Vishay Siliconix device design, low on-resistance 2 PAK (TO-263) is suitable for high current 2 D PAK (TO-263) a SiHF9520STRR-GE3 a IRF9520STRRPbF a a SiHF9520STR- SYMBOL LIMIT V - 100 DS V ± 6 4 0.40 0.025 E 300 ...

Page 2

... IRF9520S, SiHF9520S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91075 S10-1728-Rev. B, 02-Aug- µs Pulse Width ° 91075_03 = 25 ° 4 µs Pulse Width T = 175 ° 91075_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9520S, SiHF9520S Vishay Siliconix ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF9520S, SiHF9520S Vishay Siliconix 900 MHz iss gs 750 rss oss ds 600 450 300 150 Drain-to-Source Voltage ( 91075_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 Total Gate Charge (nC) 91075_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91075_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91075 S10-1728-Rev. B, 02-Aug-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9520S, SiHF9520S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9520S, SiHF9520S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1000 Top 800 Bottom 600 400 200 100 ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91075. Document Number: 91075 S10-1728-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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