IRF9620STRLPBF Vishay, IRF9620STRLPBF Datasheet

P CH MOSFET, -200V, 3.5A, SMD-220

IRF9620STRLPBF

Manufacturer Part Number
IRF9620STRLPBF
Description
P CH MOSFET, -200V, 3.5A, SMD-220
Manufacturer
Vishay
Datasheet

Specifications of IRF9620STRLPBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-3.5A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9620STRLPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S10-1728-Rev. B, 02-Aug-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Inductive Current, Clamp
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
G D
(nC)
(V)
(nC)
 - 3.5 A, dI/dt  95 A/μs, V
D
()
S
2
PAK (TO-263)
a
c
V
DD
GS
 V
= - 10 V
e
G
DS
, T
P-Channel MOSFET
e
Single
J
- 200
 150 °C.
22
12
10
D
SiHF9620S-GE3
IRF9620SPbF
SiHF9620S-E3
IRF9620S
SiHF9620S
2
C
S
D
PAK (TO-263)
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
1.5
at - 10 V
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Definition
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
I
I
, T
P
DM
I
LM
GS
DS
D
D
stg
2
PAK (TO-263) is suitable for high current
IRF9620S, SiHF9620S
D
SiHF9620STRL-GE3
IRF9620STRLPbF
SiHF9620STL-E3
IRF9620STRL
SiHF9620STL
2
PAK (TO-263)
- 55 to + 150
LIMIT
0.025
a
a
- 200
300
± 20
- 3.5
- 2.0
0.32
- 5.0
- 14
- 14
3.0
40
a
Vishay Siliconix
a
d
a
www.vishay.com
UNIT
W/°C
V/ns
°C
W
V
A
A
1

Related parts for IRF9620STRLPBF

IRF9620STRLPBF Summary of contents

Page 1

... ° 100 ° ° °C A for 10 s  150 ° IRF9620S, SiHF9620S Vishay Siliconix 2 PAK (TO-263) is suitable for high current 2 D PAK (TO-263) a SiHF9620STRL-GE3 a IRF9620STRLPbF a SiHF9620STL-E3 a IRF9620STRL a SiHF9620STL SYMBOL LIMIT V - 200 DS V ± 3 2 0.32 0.025 3.0 dV/ ...

Page 2

... IRF9620S, SiHF9620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... S10-1728-Rev. B, 02-Aug-10 80 µs Pulse Test - 91083_03 x R DS(on) max. D(on 91083_04 Single Pulse (Transient Thermal Impedence Square Wave Pulse Duration (s) 1 IRF9620S, SiHF9620S Vishay Siliconix - 5 80 µs Pulse Test 10 Drain-to-Source Voltage (V) DS Fig Typical Saturation Characteristics 2 10 Operation in this area limited DS(on) ...

Page 4

... IRF9620S, SiHF9620S Vishay Siliconix 4.0 80 µs Pulse Test V > max. DS D(on) DS(on) 3.2 2.4 1.6 0.8 0 Drain Current ( 91083_06 Fig Typical Transconductance vs. Drain Current - ° 150 C - 1.0 J ° 0.5 - 0.2 - 0.1 - 2.0 - 3.2 - 4 Source-to-Drain Voltage (V) 91083_07 SD Fig Typical Source-Drain Diode Forward Voltage 1 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature 100 T , Case Temperature (°C) 91083_14 C Fig Power vs. Temperature Derating Curve Document Number: 91083 S10-1728-Rev. B, 02-Aug- 125 150 140 120 IRF9620S, SiHF9620S Vishay Siliconix Vary t to obtain p required D.U. 0.05 Ω 0 0. Fig Clamped Inductive Test Circuit Fig Clamped Inductive Waveforms R ...

Page 6

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91083. ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords