SI8441DB-T2-E1 Vishay, SI8441DB-T2-E1 Datasheet
SI8441DB-T2-E1
Specifications of SI8441DB-T2-E1
Related parts for SI8441DB-T2-E1
SI8441DB-T2-E1 Summary of contents
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... Device Marking: 8441 xxx = Date/Lot Traceability Code Ordering Information: Si8441DB-T2-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si8441DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage ...
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... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74668 S-82119-Rev. C, 08-Sep-08 Symbol Test Conditions ° dI/dt = 100 A/µ ° Si8441DB Vishay Siliconix Min. Typ. Max. Unit - 10 0 www.vishay.com 3 ...
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... Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.40 0. 0.25 0.20 0. 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 4.5 thru 2.5 V ...
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... Limited DS(on 0 °C C BVDSS Limited Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si8441DB Vishay Siliconix I D 125 °C 25 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Pulse (s) Single Pulse Power, Junction-to-Ambient 100 µ ...
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... Si8441DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com ...
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... Single Pulse 0 Document Number: 74668 S-82119-Rev. C, 08-Sep-08 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si8441DB Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si8441DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP ( 0.5 mm PITCH Recommended Land Mark on Backside of Die Notes (Unless Otherwise Specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...